FeFET memory
The FeFET is the ferroelectric field-effect transistor.
This is a type of memory cell that can be used for large data storage and is still in the development stage.
The transistor has an element with ferroelectric properties that can be used as a memory cell.
Materials are ferroelectric when they possess an internal electrical polarity.
This means that the material has particles with a positively charged side and a negatively charged side.
When you create an electric field through this material, all the particles move in the same direction as the field. This way, the material itself acquires an electric field.
When you remove the applied field, the particles remain in place and the electric field of the material remains.
The electric field can have two directions, from plus to minus or from minus to plus.
The FeFET is constructed in the same way as the Floating-Gate memory but with a ferroelectric material in the gate. It also works in a similar way. The floating gate of the FeFET influences the formation of the electron pathway, depending on the direction of the polarity of the particles in the floating gate.